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InAlN薄膜MOCVD外延生长研究 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 8, 页码: 609-613
Authors:  贠利君;  魏同波;  刘乃鑫;  闫建昌;  王军喜;  李晋闽
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Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands 期刊论文
OPTICS EXPRESS, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071
Authors:  Wei TB;  Kong QF;  Wang JX;  Li J;  Zeng YP;  Wang GH;  Li JM;  Liao YX;  Yi FT;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
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适用于氮化物LED外延生长的纳米级图形衬底的制备方法 专利
专利类型: 发明, 专利号: CN201010263069.5, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫建昌;  王军喜;  刘乃鑫;  魏同波;  魏学成;  马平;  刘喆;  曾一平;  王国宏;  李晋闽
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一种增强LED出光效率的粗化方法 专利
专利类型: 发明, 专利号: CN201010263076.5, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫建昌;  王军喜;  刘乃鑫;  魏同波;  魏学成;  马平;  刘喆;  曾一平;  王国宏;  李晋闽
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金属催化脱氢提高镁掺杂氮化物激活效率的方法 专利
专利类型: 发明, 专利号: CN201010514077.2, 公开日期: 2011-08-31
Inventors:  魏同波;  王军喜;  路红喜;  刘乃鑫;  曾一平;  李晋闽
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氮化镓生长方法 专利
专利类型: 发明, 专利号: CN200810224104.5, 公开日期: 2011-08-31
Inventors:  段瑞飞;  魏同波;  王国宏;  曾一平;  李晋闽
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