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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Persistent photoconductivity in neutron irradiated GaN
期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 9, 页码: 093005
Authors:
Zhang, Minglan
;
Yang, Ruixia
;
Liu, Naixin
;
Wang, Xiaoliang
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View/Download:441/129
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Submit date:2014/05/16
InAlN薄膜MOCVD外延生长研究
期刊论文
半导体技术, 2011, 卷号: 36, 期号: 8, 页码: 609-613
Authors:
贠利君
;
魏同波
;
刘乃鑫
;
闫建昌
;
王军喜
;
李晋闽
Adobe PDF(1029Kb)
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View/Download:1238/356
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Submit date:2012/07/17
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 114006
Authors:
Ji, Panfeng
;
Liu, Naixin
;
Wei, Tongbo
;
Liu, Zhe
;
Lu, Hongxi
;
Wang, Junxi
;
Li, Jinmin
;
Ji, P.(jipanfeng@semi.ac.cn)
Adobe PDF(673Kb)
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View/Download:1462/521
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Submit date:2012/06/14
Efficiency
Electrostatic Devices
Electrostatic Discharge
Superlattices
Voltage Control
Influence of growth conditions on the V-defects in InGaN/GaN MQWs
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Authors:
Ji, Panfeng
;
Liu, Naixin
;
Wei, Xuecheng
;
Liu, Zhe
;
Lu, Hongxi
;
Wang, Junxi
;
Li, Jinmin
;
Ji, P.(jipanfeng@semi.ac.cn)
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View/Download:866/169
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Submit date:2012/06/14
Gallium Nitride
Growth Temperature
Semiconductor Quantum Wells
Surface Defects
Improved performance of UV-LED by p-AlGaN with graded composition
期刊论文
Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463
Authors:
Yan, Jianchang
;
Wang, Junxi
;
Cong, Peipei
;
Sun, Lili
;
Liu, Naixin
;
Liu, Zhe
;
Zhao, Chao
;
Li, Jinmin
;
Yan, J.(yanjc@semi.ac.cn)
Adobe PDF(164Kb)
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View/Download:1311/487
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Submit date:2012/06/14
Atomic Force Microscopy
Diffraction
Electroluminescence
Gallium
Metallorganic Chemical Vapor Deposition
Organic Chemicals
Organic Light Emitting Diodes(Oled)
Organometallics
Structure(Composition)
Ultraviolet Radiation
x Ray Diffraction
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 10, 页码: Art. No. 100201
Authors:
Wei TB (Wei Tongbo)
;
Wang JX (Wang Junxi)
;
Liu NX (Liu Naixin)
;
Lu HX (Lu Hongxi)
;
Zeng YP (Zeng Yiping)
;
Wang GH (Wang Guohong)
;
Li JM (Li Jinmin)
;
Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
Adobe PDF(437Kb)
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View/Download:1484/431
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Submit date:2010/11/14
Low-temperature Activation
Films
AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究
学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:
刘乃鑫
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View/Download:897/75
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Submit date:2009/04/13
一种对Ⅲ-Ⅴ氮化物进行n型和p型掺杂的方法
专利
专利类型: 发明, 专利号: CN200910241697.0, 公开日期: 2011-08-31
Inventors:
纪攀峰
;
李京波
;
闫建昌
;
刘乃鑫
;
刘喆
;
王军喜
;
李晋闽
Adobe PDF(315Kb)
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View/Download:1498/220
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Submit date:2011/08/31
适用于氮化物LED外延生长的纳米级图形衬底的制备方法
专利
专利类型: 发明, 专利号: CN201010263069.5, 公开日期: 2011-08-31
Inventors:
孙莉莉
;
闫建昌
;
王军喜
;
刘乃鑫
;
魏同波
;
魏学成
;
马平
;
刘喆
;
曾一平
;
王国宏
;
李晋闽
Adobe PDF(255Kb)
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View/Download:1333/298
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Submit date:2011/08/31
一种提高镁在Ⅲ-Ⅴ族氮化物中激活效率的方法
专利
专利类型: 发明, 专利号: CN200910241699.X, 公开日期: 2011-08-31, 2011-08-31, 2011-08-31
Inventors:
纪攀峰
;
李京波
;
闫建昌
;
刘乃鑫
;
刘喆
;
王军喜
;
李晋闽
Adobe PDF(495Kb)
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View/Download:1096/153
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Submit date:2011/08/31