Browse/Search Results:  1-10 of 15 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
Persistent photoconductivity in neutron irradiated GaN 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 9, 页码: 093005
Authors:  Zhang, Minglan;  Yang, Ruixia;  Liu, Naixin;  Wang, Xiaoliang
Adobe PDF(321Kb)  |  Favorite  |  View/Download:441/129  |  Submit date:2014/05/16
InAlN薄膜MOCVD外延生长研究 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 8, 页码: 609-613
Authors:  贠利君;  魏同波;  刘乃鑫;  闫建昌;  王军喜;  李晋闽
Adobe PDF(1029Kb)  |  Favorite  |  View/Download:1238/356  |  Submit date:2012/07/17
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 114006
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Tongbo;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(
Adobe PDF(673Kb)  |  Favorite  |  View/Download:1462/521  |  Submit date:2012/06/14
Efficiency  Electrostatic Devices  Electrostatic Discharge  Superlattices  Voltage Control  
Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Xuecheng;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(
Adobe PDF(1784Kb)  |  Favorite  |  View/Download:866/169  |  Submit date:2012/06/14
Gallium Nitride  Growth Temperature  Semiconductor Quantum Wells  Surface Defects  
Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文
Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463
Authors:  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Sun, Lili;  Liu, Naixin;  Liu, Zhe;  Zhao, Chao;  Li, Jinmin;  Yan, J.(
Adobe PDF(164Kb)  |  Favorite  |  View/Download:1311/487  |  Submit date:2012/06/14
Atomic Force Microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic Chemical Vapor Deposition  Organic Chemicals  Organic Light Emitting Diodes(Oled)  Organometallics  Structure(Composition)  Ultraviolet Radiation  x Ray Diffraction  
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 10, 页码: Art. No. 100201
Authors:  Wei TB (Wei Tongbo);  Wang JX (Wang Junxi);  Liu NX (Liu Naixin);  Lu HX (Lu Hongxi);  Zeng YP (Zeng Yiping);  Wang GH (Wang Guohong);  Li JM (Li Jinmin);  Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址:
Adobe PDF(437Kb)  |  Favorite  |  View/Download:1484/431  |  Submit date:2010/11/14
Low-temperature Activation  Films  
AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  刘乃鑫
Adobe PDF(2912Kb)  |  Favorite  |  View/Download:897/75  |  Submit date:2009/04/13
一种对Ⅲ-Ⅴ氮化物进行n型和p型掺杂的方法 专利
专利类型: 发明, 专利号: CN200910241697.0, 公开日期: 2011-08-31
Inventors:  纪攀峰;  李京波;  闫建昌;  刘乃鑫;  刘喆;  王军喜;  李晋闽
Adobe PDF(315Kb)  |  Favorite  |  View/Download:1498/220  |  Submit date:2011/08/31
适用于氮化物LED外延生长的纳米级图形衬底的制备方法 专利
专利类型: 发明, 专利号: CN201010263069.5, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫建昌;  王军喜;  刘乃鑫;  魏同波;  魏学成;  马平;  刘喆;  曾一平;  王国宏;  李晋闽
Adobe PDF(255Kb)  |  Favorite  |  View/Download:1333/298  |  Submit date:2011/08/31
一种提高镁在Ⅲ-Ⅴ族氮化物中激活效率的方法 专利
专利类型: 发明, 专利号: CN200910241699.X, 公开日期: 2011-08-31, 2011-08-31, 2011-08-31
Inventors:  纪攀峰;  李京波;  闫建昌;  刘乃鑫;  刘喆;  王军喜;  李晋闽
Adobe PDF(495Kb)  |  Favorite  |  View/Download:1096/153  |  Submit date:2011/08/31