SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-6 of 6 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 95, 期号: 2, 页码: 752-754
Authors:  Chang K;  Jiang DS;  Xia JB;  Chang, K, Chinese Acad Sci, Inst Semicond, NLSM, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(58Kb)  |  Favorite  |  View/Download:818/309  |  Submit date:2010/03/09
Photoluminescence  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang, DS, CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  Favorite  |  View/Download:917/303  |  Submit date:2010/03/09
Molecular Beam Epitaxy  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  Favorite  |  View/Download:1106/405  |  Submit date:2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究 期刊论文
稀有金属, 2004, 卷号: 28, 期号: 3, 页码: 582-584
Authors:  边历锋;  江德生;  陆书龙
Adobe PDF(153Kb)  |  Favorite  |  View/Download:560/193  |  Submit date:2010/11/23
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文
SOLID STATE COMMUNICATIONS, 2004, 卷号: 132, 期号: 10, 页码: 707-711
Authors:  Bian LF;  Jiang DS;  Tan PH;  Lu SL;  Sun BQ;  Li LH;  Harmand, JC;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lfbian@pdi-berlin.de
Adobe PDF(675Kb)  |  Favorite  |  View/Download:884/312  |  Submit date:2010/03/09
Gaassbn Epilayer  
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
Authors:  Ramsteiner M;  Jiang DS;  Harris JS;  Ploog KH;  Ramsteiner, M, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: mer@pdi-berlin.de
Adobe PDF(59Kb)  |  Favorite  |  View/Download:722/235  |  Submit date:2010/03/09
1.3 Mu-m