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Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Lin DF;  Jiang LJ;  Feng C;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Light-emitting-diodes  Vapor-phase Epitaxy  Band-gap  Mg  Photoluminescence  Ingan  Dependence  Strain  Energy  Inn  
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 445306
Authors:  Deng, QW;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Lin, DF;  Li, JM;  Wang, ZG;  Hou, X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China,daven@semi.ac.cn
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Quantum Dots  Solar-cells  Growth  Films  Gan  
An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 15, 页码: Art. No. 155403
Authors:  Gai YQ;  Li JB;  Hou QF;  Wang XL;  Xiao HL;  Wang CM;  Li JM;  Li JB Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jbli@semi.ac.cn
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N-type Gan  Electron-mobility Transistors  Vapor-phase Epitaxy  Defects  Thermoluminescence  Carbon  Trap  
Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 24, 页码: Art. No. 245104
Authors:  Zhang, XB;  Wang, XL;  Xiao, HL;  Yang, CB;  Ran, JX;  Wang, CM;  Hou, QF;  Li, JM;  Wang, ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xbzhang@semi.ac.cn
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In1-xgaxn Alloys  Band-gap  Irradiance  Single  Inn  
The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 3, 页码: 765-768
Authors:  Wang BZ;  Wang XL;  Wang XY;  Guo LC;  Wang XH;  Xiao HL;  Liu HX;  Wang, BZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangbz@semi.ac.cn
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Light-emitting-diodes  
Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 卷号: 38, 期号: 12, 页码: 1888-1891
Authors:  Zhang NH;  Wang XL;  Zeng YP;  Xiao HL;  Wang JX;  Liu HX;  Li JM;  Zhang, NH, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: znhong@red.semi.ac.cn
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Temperature Aln Interlayers