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Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
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Characterization  Point Defects  Molecular Beam Epitaxy  Semiconducting Gallium Compounds  Semiconducting Indium Compounds  Semiconducting Ternary Compounds  1.55 Mu-m  Quantum-wells  Temperature  Gaas  
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Wang XG;  Chang Y;  Chu JH;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)  |  Favorite  |  View/Download:1395/521  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  Electron-mobility Transistor  Carrier Density  Quantum-wells  Band-gap  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 210-213
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:854/235  |  Submit date:2010/08/12
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 127-131
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Mobility  
Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 548-553
Authors:  Wang SZ;  Xie SW;  Pang QJ;  Zheng H;  Xia YX;  Ji RB;  Wu Y;  He L;  Zhu ZM;  Li GH;  Wang ZP;  Wang SZ,Shanghai Jiao Tong Univ,Dept Appl Phys,Lab Optoelect Mat & Optoelect Devices,Shanghai 200030,Peoples R China.
Adobe PDF(140Kb)  |  Favorite  |  View/Download:1090/348  |  Submit date:2010/08/12
Mbe  Znse : Cl  Photoluminescence  Quenching Mechanisms  Quantum-wells  
Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 4, 页码: 994-998
Authors:  Chen Y;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Zhou W;  Wang ZG;  Chen Y,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum Wire  Polarization  Photoluminescence  Dots  Temperature  Confinement  Photoluminescence  Array  Gaas  
Growth and transport properties of InAs thin films on GaAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 191, 期号: 3, 页码: 361-364
Authors:  Zhou HW;  Zeng YP;  Wang HM;  Dong JR;  Zhu ZP;  Pan L;  Kong MY;  Zhou HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(77Kb)  |  Favorite  |  View/Download:1003/347  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Epilayers  Mbe