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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Authors:  Ding, K;  Wang, CY;  Zhang, BT;  Zhang, Y;  Guan, M;  Cui, LJ;  Zhang, YW;  Zeng, YP;  Lin, Z;  Huang, F
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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
Authors:  G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
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不同醇类对单晶硅绒面特性的影响 期刊论文
材料导报, 2011, 卷号: 25, 期号: 1B, 页码: 41194
Authors:  屈盛;  张兴旺;  毛和璜;  余银祥;  韩增华;  汤叶华;  周春兰;  王文静
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Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Authors:  Yang ZC (Yang Z. C.);  Huang AP (Huang A. P.);  Zheng XH (Zheng X. H.);  Xiao ZS (Xiao Z. S.);  Liu XY (Liu X. Y.);  Zhang XW (Zhang X. W.);  Chu PK (Chu Paul K.);  Wang WW (Wang W. W.);  Yang, ZC, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址: aphuang@buaa.edu.cn
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Electron State Density  Fermi-level Pinning (Flp)  Mis Structures  Work Function (Wf)  Work Function  
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Wang YS (Wang Y. S.);  Zhang H (Zhang H.)
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Thermophotovoltaic  Gallium Antimonide  Absorption Coefficient  
Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 卷号: 25, 期号: 9, 页码: Art. No. 095002
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Bai YM (Bai Y. M.)
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Optical Dielectric Function  Dispersion-relations  Carrier Mobilities  Phase Epitaxy  Doped Gaas  Devices  Gasb  Inp  Alxga1-xas  Ingaassb  
Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 卷号: 53, 期号: 9, 页码: 2569-2574
Authors:  Zhang H (Zhang Han);  Chen NF (Chen NuoFu);  Wang Y (Wang Yu);  Zhang XW (Zhang XingWang);  Yin ZG (Yin ZhiGang);  Shi HW (Shi HuiWei);  Wang YS (Wang YanSuo);  Huang TM (Huang TianMao);  Bai YM (Bai YiMing);  Fu Z (Fu Zhen)
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Tandem Solar Cell  Theoretical Efficiency  Dislocation  Buffer Layers  
利用磁控溅射在石墨衬底上生长多晶硅薄膜的方法 专利
专利类型: 发明, 专利号: CN200910242346.1, 公开日期: 2011-08-31
Inventors:  施辉伟;  陈诺夫;  黄添懋;  尹志岗;  吴金良;  张汉
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在玻璃衬底上制备P型多晶硅薄膜的方法 专利
专利类型: 发明, 专利号: CN200910241692.8, 公开日期: 2011-08-31
Inventors:  黄添懋;  陈诺夫;  施辉伟;  尹志岗;  吴金良;  王彦硕;  汪宇;  张汉
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具有宽光谱响应的硅探测器结构及其制作方法 专利
专利类型: 发明, 专利号: CN102290481A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  刘德伟;  黄永光;  朱小宁;  王熙元;  马丽;  朱洪亮
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