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Fabrication of tellurium doped silicon detector by femtosecond laser and excimer laser 期刊论文
Chinese Journal of Lasers, 2013, 卷号: 40, 期号: 3, 页码: 0302001
Authors:  Wang, Xiyuan;  Huang, Yongguang;  Liu, Dewei;  Zhu, Xiaoning;  Wang, Baojun;  Zhu, Hongliang
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Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 6, 页码: 063001
Authors:  Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang
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硫、碲超饱和掺杂硅材料的制备、表征和光电器件研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  王熙元
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Surface morphology and infrared absorption of silicon irradiated by picosecond laser pulses in SF6 期刊论文
Advanced Materials Research, 2012, 卷号: 418-420, 页码: 77-81
Authors:  Liu, Dewei;  Huang, Yongguang;  Zhu, Xiaoning;  Wang, Xiyuan;  Yu, Haijuan;  Lin, Xuechun;  Chen, Minghua;  Zhu, Hongliang
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Picosecond laser microstructuring for black silicon solar cells 期刊论文
Advanced Materials Research, 2012, 卷号: 418-420, 页码: 217-221
Authors:  Zhu, Xiaoning;  Zhu, Hongliang;  Liu, Dewei;  Huang, Yongguang;  Wang, Xiyuan;  Yu, Haijuan;  Wang, Shuai;  Lin, Xuechun;  Han, Peide
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Effect of laser fluence on the properties of microstructured silicon solar cells 期刊论文
Physics Procedia, 2011, 卷号: 22, 页码: 464-470
Authors:  Liu, Dewei;  Huang, Yongguang;  Zhu, Xiaoning;  Wang, Xiyuan;  Chen, Minghua;  Zhu, Hongliang;  Zhu, H.(
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Cytology  Solar Cells  Sulfur  Sulfur Hexafluoride  Technology  
Microwave Study of FeSe0.3Te0.7 Thin Film by TE011-Mode Sapphire Dielectric Resonator 期刊论文
Authors:  Wu Y;  Zhou SY;  Wang XY;  Cao LX;  Zhang XQ;  Luo S;  He YS;  Barannik AA;  Cherpak NT;  Skresanov VN
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Cavity Resonator  Microwave Measurement  Multi-gap  Node  
Superconductivity in Iron Telluride Thin Films under Tensile Stress 期刊论文
PHYSICAL REVIEW LETTERS, 104 (1): JAN 8 2010, 2010, 卷号: 104, 期号: 1, 页码: Art. No. 017003
Authors:  Han Y;  Li WY;  Cao LX;  Wang XY;  Xu B;  Zhao BR;  Guo YQ;  Yang JL;  Han, Y, Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100190, Peoples R China. E-mail Address:
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43 k  Fese  Compound  Pressure  
具有宽光谱响应的硅探测器结构及其制作方法 专利
专利类型: 发明, 专利号: CN102290481A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  刘德伟;  黄永光;  朱小宁;  王熙元;  马丽;  朱洪亮
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具有红外响应的表面纳米点硅光电探测器结构的制作方法 专利
专利类型: 发明, 专利号: CN102227005A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  刘德伟;  黄永光;  朱小宁;  王熙元;  马丽;  朱洪亮
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