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Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Authors:  Huang TM (Huang TianMao);  Chen NF (Chen NuoFu);  Zhang XW (Zhang XingWang);  Bai YM (BaiYiMing);  Yin ZG (Yin ZhiGang);  Shi HW (Shi HuiWei);  Zhang H (Zhang Han);  Wang Y (Wang Yu);  Wang YS (Wang YanShuo);  Yang XL (Yang XiaoLi);  Huang, TM, Chinese AcadSci, InstSemicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tmhuang@semi.ac.cn
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Polycrystalline Silicon Thin Film  Aluminum Induced Crystallization  (111) Preferred Orientation  Induced Layer-exchange