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Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879
Authors:  Zhao YW;  Dong HW;  Chen YH;  Zhang YH;  Jiao JH;  Zhao JQ;  Lin LY;  Fung S;  Zhao YW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Semiinsulating Inp  Zn Diffusion  Complexes  Phosphide  Mechanism  Crystals  
Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 17, 页码: 2488-2490
Authors:  Li LH;  Pan Z;  Xu YQ;  Du Y;  Lin YW;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(52Kb)  |  Favorite  |  View/Download:820/266  |  Submit date:2010/08/12
1.3 Mu-m  Optical-properties  Band-gap  Superlattices  Lasers  Gaas  
Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 7, 页码: 958-960
Authors:  Luo XD;  Xu ZY;  Ge WK;  Pan Z;  Li LH;  Lin YW;  Luo XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(427Kb)  |  Favorite  |  View/Download:1289/500  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Band-gap Energy  Temperature Photoluminescence  Mechanism  Ganxas1-x  Emission  Nitrogen  Alloys  Shift  Ganas  
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
Authors:  Pan Z;  Li LH;  Lin YW;  Sun BQ;  Jiang DS;  Ge WK;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Ingaasn  Laser  Operation  Alloys  Growth  Gaas  
Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 77, 期号: 9, 页码: 1280-1282
Authors:  Pan Z;  Li LH;  Zhang W;  Lin YW;  Wu RH;  Ge W;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Chemical-vapor-deposition  Laser  Operation  Gaas  
Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 77, 期号: 2, 页码: 214-216
Authors:  Pan Z;  Li LH;  Zhang W;  Lin YW;  Wu RH;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(129Kb)  |  Favorite  |  View/Download:815/239  |  Submit date:2010/08/12
Temperature Pulsed Operation  Chemical-vapor-deposition  Quantum-wells  Laser-diode  Tertiarybutylarsine  Gaas  
Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction 期刊论文
APPLIED PHYSICS LETTERS, 1999, 卷号: 75, 期号: 2, 页码: 223-225
Authors:  Pan Z;  Wang YT;  Zhuang Y;  Lin YW;  Zhou ZQ;  Li LH;  Wu RH;  Wang QM;  Pan Z,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(163Kb)  |  Favorite  |  View/Download:1029/302  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Gaasn Alloys  Growth  Energy