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Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire 期刊论文
NANO LETTERS, 2013, 卷号: 13, 期号: 4, 页码: 1399-1404
Authors:  Yu, Ying;  Li, Mi-Feng;  He, Ji-Fang;  Ni, Hai-Qiao;  Niu, Zhi-Chuan;  He, Yu-Ming;  Wei, Yu-Jia;  He, Yu;  Zha, Guo-Wei;  Shang, Xiang-Jun;  Wang, Juan;  Wang, Li-Juan;  Wang, Guo-Wei
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Si基III-V族半导体异质兼容低维材料的分子束外延生长 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  贺继方
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Si基iii-v族半导体  Inas/gaas量子点  半导体纳米线  自催化生长  分子束外延  
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文
Optoelectronics Letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Authors:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng;  Shang, Xiang-jun;  Niu, Zhi-chuan;  Zhu, Y.(ttcow@126.com)
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Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells  
在衬底上生长异变缓冲层的方法 专利
专利类型: 发明, 专利号: CN102194671A, 公开日期: 2012-08-29, 2011-09-21, 2012-08-29
Inventors:  贺继方;  尚向军;  倪海桥;  王海莉;  李密峰;  朱岩;  王莉娟;  喻颖;  贺正宏;  徐应强;  牛智川
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基于分叉纳米线的多端量子调控器件的制备方法 专利
专利类型: 发明, 公开日期: 2014-01-22
Inventors:  喻颖;  李密锋;  贺继方;  査国伟;  徐建星;  尚向军;  王莉娟;  倪海桥;  贺振宏;  牛智川
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一种低密度InAs量子点的分子束外延生长方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  李密锋;  喻颖;  贺继方;  査国伟;  尚向军;  倪海桥;  贺振宏;  牛智川
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