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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
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自组织量子点与微腔耦合结构单光子发光器件制备 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  王莉娟
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Influence of window layer thickness on double layer antireflection coating for triple junction solar cells 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001
Authors:  Wang, Lijuan;  Zhan, Feng;  Yu, Ying;  Zhu, Yan;  Liu, Shaoqing;  Huang, Shesong;  Ni, Haiqiao;  Niu, Zhichuan;  Wang, L.(
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Antireflection Coatings  Coatings  Gallium  Optimization  Silicon Compounds  Titanium Dioxide  Transfer Matrix Method  Zinc Sulfide  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address:
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 076104
Authors:  Wang LJ;  Zhang SM;  Wang YT;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang H;  Shi YS;  Liu SY;  Yang H;  Zhang SM Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Densities  Crystals  Layers  
Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 17, 页码: Art.No.173104
Authors:  Ding, F (Ding, Fei);  Wang, LJ (Wang, Lijuan);  Kiravittaya, S (Kiravittaya, Suwit);  Muller, E (Mueller, Elisabeth);  Rastelli, A (Rastelli, Armando);  Schmidt, OG (Schmidt, Oliver G.);  Ding, F, Max Planck Inst Festkorperforsch, Heisenbergerstr 1, D-70569 Stuttgart, Germany. 电子邮箱地址:
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Self-assembled Nanoholes