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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
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自组织量子点与微腔耦合结构单光子发光器件制备 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  王莉娟
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Influence of window layer thickness on double layer antireflection coating for triple junction solar cells 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001
Authors:  Wang, Lijuan;  Zhan, Feng;  Yu, Ying;  Zhu, Yan;  Liu, Shaoqing;  Huang, Shesong;  Ni, Haiqiao;  Niu, Zhichuan;  Wang, L.(
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Antireflection Coatings  Coatings  Gallium  Optimization  Silicon Compounds  Titanium Dioxide  Transfer Matrix Method  Zinc Sulfide  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address:
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 076104
Authors:  Wang LJ;  Zhang SM;  Wang YT;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang H;  Shi YS;  Liu SY;  Yang H;  Zhang SM Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Densities  Crystals  Layers  
Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 17, 页码: Art.No.173104
Authors:  Ding, F (Ding, Fei);  Wang, LJ (Wang, Lijuan);  Kiravittaya, S (Kiravittaya, Suwit);  Muller, E (Mueller, Elisabeth);  Rastelli, A (Rastelli, Armando);  Schmidt, OG (Schmidt, Oliver G.);  Ding, F, Max Planck Inst Festkorperforsch, Heisenbergerstr 1, D-70569 Stuttgart, Germany. 电子邮箱地址:
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Self-assembled Nanoholes