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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906
Authors:  Kong, SS;  Wei, HY;  Yang, SY;  Li, HJ;  Feng, YX;  Chen, Z;  Liu, XL;  Wang, LS;  Wang, ZG
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Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Zhang, H;  Kong, SS;  Zhao, GJ;  Liu, XL
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Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 4, 页码: 045015
Authors:  Feng, YX;  Liu, GP;  Yang, SY;  Wei, HY;  Liu, XL;  Zhu, QS;  Wang, ZG
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Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6416
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Chen, Z;  Wang, LS;  Kong, SS;  Zhao, GJ;  Liu, XL
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