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蓝宝石衬底氮化铝材料HVPE生长研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  孔苏苏
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氮化铝 Hvpe 应力  
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906
Authors:  Kong, SS;  Wei, HY;  Yang, SY;  Li, HJ;  Feng, YX;  Chen, Z;  Liu, XL;  Wang, LS;  Wang, ZG
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Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Zhang, H;  Kong, SS;  Zhao, GJ;  Liu, XL
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Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6416
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Chen, Z;  Wang, LS;  Kong, SS;  Zhao, GJ;  Liu, XL
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Scaling of the Berry phase close to the excited-state quantum phase transition in the Lipkin model 期刊论文
PHYSICAL REVIEW A, 2012, 卷号: 85, 期号: 4, 页码: 44102
Authors:  Yuan, ZG;  Zhang, P;  Li, SS;  Jing, J;  Kong, LB
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Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 5, 页码: 358-359
Authors:  Liu JJ;  Zhang SF;  Kong XJ;  Li SS;  Liu JJ,Hebei Normal Univ,Dept Phys,Shijiazhuang 050016,Peoples R China.
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2-dimensional Semiconductors  Neutral Donors  Biexcitons  Photoluminescence  
Binding energy of excitons bound to neutral donors in two-dimensional semiconductors 期刊论文
CHINESE PHYSICS LETTERS, 1999, 卷号: 16, 期号: 7, 页码: 526-528
Authors:  Liu JJ;  Li YX;  Kong XJ;  Li SS;  Liu JJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Gaas-alxga1-xas Quantum-wells  Direct-gap Semiconductors  D-centers  Photoluminescence  Biexcitons  
缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法 专利
专利类型: 发明, 公开日期: 2014-06-11
Inventors:  冯玉霞;  杨少延;  魏鸿源;  焦春美;  孔苏苏
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一种氮化铝一维纳米结构材料的制备方法 专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:  孔苏苏;  李辉杰;  冯玉霞;  赵桂娟;  魏鸿源;  杨少延;  王占国
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