×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
Log In
Register
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
中科院半导体材料科学... [6]
中国科学院半导体研究... [2]
半导体超晶格国家重点... [1]
Authors
Document Type
Journal ar... [6]
Patent [2]
Thesis [1]
Date Issued
2015 [1]
2014 [3]
2012 [1]
2000 [1]
1999 [1]
Language
英语 [6]
Source Publication
CHINESE PH... [2]
CRYSTENGCO... [1]
PHYSICAL R... [1]
RSC ADVANC... [1]
SCIENTIFIC... [1]
Funding Project
Indexed By
SCI [6]
Funding Organization
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
Browse/Search Results:
1-9 of 9
Help
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
WOS Cited Times Ascending
WOS Cited Times Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
Submit date Ascending
Submit date Descending
Issue Date Ascending
Issue Date Descending
Author Ascending
Author Descending
Title Ascending
Title Descending
蓝宝石衬底氮化铝材料HVPE生长研究
学位论文
, 北京: 中国科学院研究生院, 2015
Authors:
孔苏苏
Adobe PDF(4691Kb)
  |  
Favorite
  |  
View/Download:630/49
  |  
Submit date:2015/06/02
氮化铝 Hvpe 应力
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy
期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906
Authors:
Kong, SS
;
Wei, HY
;
Yang, SY
;
Li, HJ
;
Feng, YX
;
Chen, Z
;
Liu, XL
;
Wang, LS
;
Wang, ZG
Adobe PDF(905Kb)
  |  
Favorite
  |  
View/Download:514/135
  |  
Submit date:2015/03/20
Significant quality improvement of GaN on Si upon formation of an AlN defective layer
期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Authors:
Feng, YX
;
Wei, HY
;
Yang, SY
;
Zhang, H
;
Kong, SS
;
Zhao, GJ
;
Liu, XL
Adobe PDF(1897Kb)
  |  
Favorite
  |  
View/Download:336/47
  |  
Submit date:2015/03/25
Competitive growth mechanisms of AlN on Si (111) by MOVPE
期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6416
Authors:
Feng, YX
;
Wei, HY
;
Yang, SY
;
Chen, Z
;
Wang, LS
;
Kong, SS
;
Zhao, GJ
;
Liu, XL
Adobe PDF(3657Kb)
  |  
Favorite
  |  
View/Download:351/30
  |  
Submit date:2015/03/25
Scaling of the Berry phase close to the excited-state quantum phase transition in the Lipkin model
期刊论文
PHYSICAL REVIEW A, 2012, 卷号: 85, 期号: 4, 页码: 44102
Authors:
Yuan, ZG
;
Zhang, P
;
Li, SS
;
Jing, J
;
Kong, LB
Adobe PDF(663Kb)
  |  
Favorite
  |  
View/Download:723/203
  |  
Submit date:2013/03/17
Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells
期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 5, 页码: 358-359
Authors:
Liu JJ
;
Zhang SF
;
Kong XJ
;
Li SS
;
Liu JJ,Hebei Normal Univ,Dept Phys,Shijiazhuang 050016,Peoples R China.
Adobe PDF(195Kb)
  |  
Favorite
  |  
View/Download:645/149
  |  
Submit date:2010/08/12
2-dimensional Semiconductors
Neutral Donors
Biexcitons
Photoluminescence
Binding energy of excitons bound to neutral donors in two-dimensional semiconductors
期刊论文
CHINESE PHYSICS LETTERS, 1999, 卷号: 16, 期号: 7, 页码: 526-528
Authors:
Liu JJ
;
Li YX
;
Kong XJ
;
Li SS
;
Liu JJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(196Kb)
  |  
Favorite
  |  
View/Download:904/259
  |  
Submit date:2010/08/12
Gaas-alxga1-xas Quantum-wells
Direct-gap Semiconductors
D-centers
Photoluminescence
Biexcitons
缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法
专利
专利类型: 发明, 公开日期: 2014-06-11
Inventors:
冯玉霞
;
杨少延
;
魏鸿源
;
焦春美
;
孔苏苏
Adobe PDF(1519Kb)
  |  
Favorite
  |  
View/Download:296/67
  |  
Submit date:2014/11/24
一种氮化铝一维纳米结构材料的制备方法
专利
专利类型: 发明, 公开日期: 2016-08-30
Inventors:
孔苏苏
;
李辉杰
;
冯玉霞
;
赵桂娟
;
魏鸿源
;
杨少延
;
王占国
Adobe PDF(1285Kb)
  |  
Favorite
  |  
View/Download:207/3
  |  
Submit date:2016/08/30