SEMI OpenIR  > 中科院半导体材料科学重点实验室
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy
Kong, SS; Wei, HY; Yang, SY; Li, HJ; Feng, YX; Chen, Z; Liu, XL; Wang, LS; Wang, ZG
2014
Source PublicationRSC ADVANCES
Volume4Issue:97Pages:54902-54906
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26114
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Kong, SS,Wei, HY,Yang, SY,et al. Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy[J]. RSC ADVANCES,2014,4(97):54902-54906.
APA Kong, SS.,Wei, HY.,Yang, SY.,Li, HJ.,Feng, YX.,...&Wang, ZG.(2014).Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy.RSC ADVANCES,4(97),54902-54906.
MLA Kong, SS,et al."Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy".RSC ADVANCES 4.97(2014):54902-54906.
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