SEMI OpenIR  > 中科院半导体材料科学重点实验室
Significant quality improvement of GaN on Si upon formation of an AlN defective layer
Feng, YX; Wei, HY; Yang, SY; Zhang, H; Kong, SS; Zhao, GJ; Liu, XL
2014
Source PublicationCRYSTENGCOMM
Volume16Issue:32Pages:7525-7528
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26149
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Feng, YX,Wei, HY,Yang, SY,et al. Significant quality improvement of GaN on Si upon formation of an AlN defective layer[J]. CRYSTENGCOMM,2014,16(32):7525-7528.
APA Feng, YX.,Wei, HY.,Yang, SY.,Zhang, H.,Kong, SS.,...&Liu, XL.(2014).Significant quality improvement of GaN on Si upon formation of an AlN defective layer.CRYSTENGCOMM,16(32),7525-7528.
MLA Feng, YX,et al."Significant quality improvement of GaN on Si upon formation of an AlN defective layer".CRYSTENGCOMM 16.32(2014):7525-7528.
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