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Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
Authors:  S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  X. Li;  W. Liu;  L.Q. Zhang;  H. Long;  M. Li
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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  W. Liu;  F. Liang;  X. Li;  S.T. Liu;  L.Q. Zhang;  H. Yang
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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
Superlattices and Microstructures, 2016, 卷号: 97, 页码: 186-192
Authors:  X. Li;  D.G. Zhao;  J. Yang;  D.S. Jiang;  Z.S. Liu;  P. Chen;  J.J. Zhu;  W. Liu;  X.G. He;  X.J. Li;  F. Liang;  L.Q. Zhang;  J.P. Liu;  H. Yang;  Y.T. Zhang;  G.T. Du
Adobe PDF(1237Kb)  |  Favorite  |  View/Download:291/3  |  Submit date:2017/03/10