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Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu L;  Chen NF;  Gao FB;  Yin ZG;  Bai YM;  Zhang XW;  Liu, L, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1382/304  |  提交时间：2010/03/09
Thermophotovoltaic Cell  
Space-grown SI-GaAs and its application 会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:  Chen NF;  Zhong XG;  Zhang M;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)  |  收藏  |  浏览/下载：1777/365  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Floating-zone Growth  Crystal-growth  Zero Gravity  Microgravity  Segregation  Stoichiometry  Silicon  Defects  Insb  
Semi-insulating GaAs grown in outer space 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen NF;  Zhong XR;  Lin LY;  Xie X;  Zhang M;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(158Kb)  |  收藏  |  浏览/下载：1387/315  |  提交时间：2010/11/15
Gaas  Outer Space  Microgravity  Integrated Circuit  Semiinsulating Gallium-arsenide  Lec-gaas  Defects  Stoichiometry  Segregation  Carbon  Boron  
Stoichiometry in GaAs grown in outer space measured nondestructively 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:  Chen NF;  Zhong XG;  Lin LY;  Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：836/0  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Crystals  Defects  
Structural properties of SI-GaAs grown in space 会议论文
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10), NAGOYA, JAPAN, JUL 12-19, 1998
作者:  Chen NF;  Wang YT;  Zhong XR;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：884/0  |  提交时间：2010/11/15
Semiinsulating Gallium-arsenide  Microgravity  Stoichiometry