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AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Algan/gan Hemts  
A low power integrated CMOS transmitter for BCI system 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
Authors:  Zhang X (Zhang Xu);  Liu HJ (Liu Haijun);  Liu JB (Liu Jinbin);  Huang BJ (Huang Beiju);  Zhu L (Zhu Lin);  Gu M (Gu Ming);  Chen HD (Chen Hongda);  Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Brain Computer Interface  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
Authors:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
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Nitrogen