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A model for scattering due to interface roughness in finite quantum wells 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
Authors:  Li JM;  Wu JJ;  Han XX;  Lu YW;  Lin XL;  Zhu QS;  Wang ZG;  Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail:
Adobe PDF(152Kb)  |  Favorite  |  View/Download:1120/442  |  Submit date:2010/04/11
Single-particle  Electron-gas  Mobility  Gaas  Disorder  
Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 卷号: 17, 期号: 6, 页码: 570-574
Authors:  Dong HW;  Zhao YW;  Lu HP;  Jiao JH;  Zhao JQ;  Lin LY;  Dong HW,Chinese Acad Sci,Ctr Mat Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(244Kb)  |  Favorite  |  View/Download:944/327  |  Submit date:2010/08/12
Fe-doped Inp  Semiinsulating Inp  Electrical-properties  Room-temperature  Uniformity  Pressure  Ingot