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无权访问的条目 学位论文
Authors:  李喜林
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无权访问的条目 学位论文
Authors:  张希林
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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 10, 页码: 107305
Authors:  Gu CY (Gu Cheng-Yan);  Liu GP (Liu Gui-Peng);  Shi K (Shi Kai);  Song YF (Song Ya-Feng);  Li CM (Li Cheng-Ming);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 11, 页码: 117103
Authors:  Zhao GJ (Zhao Gui-Juan);  Li ZW (Li Zhi-Wei);  Wei HY (Wei Hong-Yuan);  Liu GP (Liu Gui-Peng);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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Low temperature characteristics of AlGaN/GaN high electron mobility transistors 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 56, 期号: 1, 页码: 10101
Authors:  Lin DF (Lin D. F.);  Wang XL (Wang X. L.);  Xiao HL (Xiao H. L.);  Wang CM (Wang C. M.);  Qiang LJ (Qiang L. J.);  Feng C (Feng C.);  Chen H (Chen H.);  Hou QF (Hou Q. F.);  Deng QW (Deng Q. W.);  Bi Y (Bi Y.);  Kang H (Kang H.)
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Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Lin DF;  Jiang LJ;  Feng C;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Light-emitting-diodes  Vapor-phase Epitaxy  Band-gap  Mg  Photoluminescence  Ingan  Dependence  Strain  Energy  Inn  
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 445306
Authors:  Deng, QW;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Lin, DF;  Li, JM;  Wang, ZG;  Hou, X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China,daven@semi.ac.cn
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Quantum Dots  Solar-cells  Growth  Films  Gan  
An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi Y;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Peng EC;  Lin DF;  Feng C;  Jiang LJ;  Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
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2-dimensional Electron-gas  Algan/gan/ingan/gan Dh-hemts  Millimeter-wave Applications  Field-effect Transistors  Heterojunction Fets  Heterostructures  Passivation  Confinement  Performance  Barriers