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High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1726/427  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes  
Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Chen WD;  Wang YQ;  Chen CY;  Diao HW;  Liao XB;  Kong GL;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1274/291  |  提交时间：2010/10/29
Photoluminescence  Luminescence  Spectroscopy  Deposition  
Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Yu LJ;  Guo WH;  Huang YZ;  Yu LJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(77Kb)  |  收藏  |  浏览/下载：1240/268  |  提交时间：2010/10/29
Semiconductor Optical Amplifier  Strained Quantum Well  Optical Waveguide  Polarization  Quantum-well Lasers  
Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Liu WK;  Lin SM;  Wu S;  Cheng P;  Zhang CS;  Liu WK Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(168Kb)  |  收藏  |  浏览/下载：1365/364  |  提交时间：2010/10/29
Birefringence  Polarization  Vcsel  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1254/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Niu ZC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)  |  收藏  |  浏览/下载：1162/221  |  提交时间：2010/11/15
Crystal Morphology  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Gallium Arsenide  Semiconducting Indium Gallium Arsenide  1.35 Mu-m  Gaas-surfaces  Photoluminescence  Islands  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1144/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn  
An investigation on fiber coupled polymer waveguide for electro-optic modulator 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Yang XH;  Du Y;  Yin AM;  Shi ZW;  Wu RH;  Li Z;  Zhou JY;  Zhao YX;  Shen YQ;  Yang XH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1475/434  |  提交时间：2010/10/29
Polymer  Dispersion  Waveguide  Mismatch Loss  Effective Index  Fiber Coupling  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：1002/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1364/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers