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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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GaN-based violet lasers grown on sapphire with a novel facet fabrication method
会议论文
, 中国深圳, 2015
作者:
Yingdong Tian
;
Yun Zhang
;
Jianchang Yan
;
Xiang Chen
;
Yanan Guo
;
Xuecheng Wei
;
Junxi Wang
;
Jinmin Li
Adobe PDF(336Kb)
  |  
收藏
  |  
浏览/下载:961/5
  |  
提交时间:2016/06/02
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
;
Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)
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  |  
浏览/下载:1879/307
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
Buffer Layer
Lpcvd
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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  |  
浏览/下载:2001/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
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收藏
  |  
浏览/下载:1771/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:
Cheng BW
;
Xue HY
;
Hu D
;
Han GQ
;
Zeng YG
;
Bai AQ
;
Xue CL
;
Luo LP
;
Zuo YH
;
Wang QM
;
Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(331Kb)
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  |  
浏览/下载:1460/312
  |  
提交时间:2010/03/09
Sige/si(100) Epitaxial-films
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
;
Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)
  |  
收藏
  |  
浏览/下载:2258/749
  |  
提交时间:2010/03/09
Algan
Ht-algan Buffer
Ht-interlayers
Ultraviolet (Uv) Led
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
  |  
收藏
  |  
浏览/下载:1580/341
  |  
提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)
  |  
收藏
  |  
浏览/下载:1607/334
  |  
提交时间:2010/03/29
Quantum Dots
Photoluminescence
Combination Layer
1.3 Mu-m
Lasers
Inalas
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:
Xu Y (Xu Ying)
;
Hu ZH (Hu Zhihua)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Zeng XB (Zeng Xiangbo)
;
Hao HY (Hao Huiying)
;
Liao XB (Liao Xianbo)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
;
Hu, ZH, New Univ Lisbon, Dept Mat Sci, Monte Caparica, P-2829516 Caparica, Almada, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(110Kb)
  |  
收藏
  |  
浏览/下载:2174/491
  |  
提交时间:2010/03/29
Silicon
Defect influence on luminescence efficiency of GaN-based LEDs
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Li SP (Li Shuping)
;
Fang ZL (Fang Zhilai)
;
Chen HY (Chen Hangyang)
;
Li JC (Li Jinchai)
;
Chen XH (Chen Xiaohong)
;
Yuan XL (Yuan Xiaoli)
;
Sekiguchi T (Sekiguchi Takashi)
;
Wang QM (Wang Qiming)
;
Kang JY (Kang Junyong)
;
Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Adobe PDF(142Kb)
  |  
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  |  
浏览/下载:1380/288
  |  
提交时间:2010/03/29
Defects