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Highly Conductive Graphene Paper with Vertically Aligned Reduced Graphene Oxide Sheets Fabricated by Improved Electrospray Deposition Technique 期刊论文
ACS Applied Materials and Interfaces, 2019, 卷号: 11, 期号: 11, 页码: 10810-10817
Authors:  Jun-Xiang Yan;   Yu-Chen Leng;   Ya-Nan Guo;   Guo-Qiang Wang;   He Gong;   Pei-Zhi Guo;   Ping-Heng Tan;   Yun-Ze Long;   Xue-Lu Liu ;   Wen-Peng Han
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1.3-μm 4×25-Gb/s hybrid integrated TOSA and ROSA 期刊论文
Frontiers of Information Technology & Electronic Engineering, 2019, 卷号: 20, 期号: 4, 页码: 490–497
Authors:  Yu Liu;   Hao-tian Bao;   Yi-ming Zhang;   Zhi-ke Zhang;   Yun-shan Zhang;   Xiang-fei Chen;   Jun Lu;   Yue-chun Shi;   Jia-shun Zhang;   Liang-liang Wang;   Jun-ming An ;   Ning-hua Zhu
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Enhancing oxidation rate of 4H–SiC by oxygen ion implantation 期刊论文
Journal of Materials Science, 2018, 卷号: 54, 期号: 2, 页码: 1147-1152
Authors:  Min Liu;  Shuyuan Zhang;  Xiang Yang;  Xue Chen;  Zhongchao Fan;  Xiaodong Wang;  Fuhua Yang;  Chao Ma;  Zhi He
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers 期刊论文
Nanoscale Research Letters, 2018, 卷号: 13, 页码: 59
Authors:  Xiang-Bin Su ;   Ying Ding ;   Ben Ma ;   Ke-Lu Zhang ;   Ze-Sheng Chen ;   Jing-Lun Li ;   Xiao-Ran Cui ;  Ying-Qiang Xu ;   Hai-Qiao Ni ;   Zhi-Chuan Niu
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Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 卷号: 20, 期号: 8, 页码: 5699-5707
Authors:  Juan Lu;   Zhi-Qiang Fan;   Jian Gong;   Jie-Zhi Chen;   Huhe ManduLa;   Yan-Yang Zhang;   Shen-Yuan Yang Xiang-Wei Jiang
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High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 30, 页码: e1801608
Authors:  Zhaolong Chen;  Xiang Zhang;  Zhipeng Dou;  Tongbo Wei;  Zhiqiang Liu;  Yue Qi;  Haina Ci;  Yunyu Wang;  Yang Li;  Hongliang Chang;  Jianchang Yan;  Shenyuan Yang;  Yanfeng Zhang;  Junxi Wang;  Peng Gao;  Jinmin Li;  Zhongfan Liu
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Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors 期刊论文
ACS Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 22, 页码: 19271-19277
Authors:  Zhi-Qiang Fan;   Xiang-Wei Jiang;  Jiezhi Chen;   Jun-Wei Luo
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无权访问的条目 学位论文
Authors:  陈翔
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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Hui Yang;  Heng Long;  Mo Li
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Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shaungtao Liu;  Yao Xing;  Liqun Zhang;  Mo Li;  Jian Zhang
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