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Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1882/527  |  提交时间：2010/03/09
Zinc Oxide  Defect  Vacancy  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1362/225  |  提交时间：2010/03/09
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Zeng, XB;  Liao, XB;  Dai, ST;  Wang, B;  Xu, YY;  Xiang, XB;  Hu, ZH;  Diao, HW;  Kong, GL;  Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)  |  收藏  |  浏览/下载：1666/241  |  提交时间：2010/03/29
Chemical Vapor Deposition Processes  Nanomaterials  Semiconducting Silicon  Visible Photoluminescence  Porous Silicon  Amorphous-silicon  Si  Spectroscopy  Films  Nanostructures  Confinement  Growth  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1529/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 338, Campos do Jordao, BRAZIL, AUG 25-29, 2003
作者:  Zhang S;  Liao X;  Xu Y;  Martins R;  Fortunato E;  Kong G;  Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(484Kb)  |  收藏  |  浏览/下载：1328/340  |  提交时间：2010/11/15
Amorphous-silicon Films  Scattering  Absorption  Densities  Hydrogen  
Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Chen WD;  Wang YQ;  Chen CY;  Diao HW;  Liao XB;  Kong GL;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1274/291  |  提交时间：2010/10/29
Photoluminescence  Luminescence  Spectroscopy  Deposition  
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Tan PH;  Tang Y;  Hu CY;  Li F;  Bai S;  Cheng HM;  You JQ;  Tan PH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1183/0  |  提交时间：2010/10/29
Electric-arc Technique  Large-scale  Scattering  Spectra  Stokes  Modes  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1248/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1609/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:  Feng Y;  Zhu M;  Liu F;  Liu J;  Han H;  Han Y;  Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：1264/315  |  提交时间：2010/11/15
Poly-si  Structure  Hot-wire  Plasma-enhanced Chemical Vapor Deposition (Pecvd)  Chemical-vapor-deposition  Microcrystalline Silicon  Hydrogen