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Design and Realization of Index-Coupled DFB Laser with Sampled Grating 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang H;  Zhu HL;  Chen XF;  Li JS;  Wang LS;  Zhang W;  Wang W;  Wang, H, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1570/372  |  提交时间：2010/03/09
Tuning Range  
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1790/433  |  提交时间：2010/03/09
Algan/gan Hemts  
Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Li GK;  Wang XD;  Liang JR;  Ji A;  Hu M;  Yang F;  Liu J;  Wu NJ;  Chen HD;  Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(803Kb)  |  收藏  |  浏览/下载：1764/420  |  提交时间：2010/03/09
Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Wang XD;  Li GK;  Liang JR;  Ji A;  Hu M;  Yang FH;  Liu J;  Wu NJ;  Chen HD;  Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
Adobe PDF(706Kb)  |  收藏  |  浏览/下载：1820/352  |  提交时间：2010/03/09
V2o5 Thin-films  
Characteristics of triangle and square InP/InGaAsP microlasers 会议论文
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, Athens, GREECE, JUN 22-26, 2008
作者:  Huang YZ;  Wang SJ;  Che KJ;  Hu YH;  Du Y;  Yu LJ;  Huang, YZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1575/252  |  提交时间：2010/03/09
Semiconductor Lasers  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(386Kb)  |  收藏  |  浏览/下载：1753/355  |  提交时间：2010/03/09
Pockels Effect  
Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Hu HY;  Lu L;  Du W;  Liu HW;  Kan Q;  Wang CX;  Xu XS;  Chen HD;  Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1924/537  |  提交时间：2010/03/09
Gan  
Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Zhao LJ;  Zhang J;  Wang L;  Cheng YB;  Pan JQ;  Liu HB;  Zhu HL;  Zhou F;  Bian J;  Wang BJ;  Zhu NH;  Wei W;  Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(375Kb)  |  收藏  |  浏览/下载：2285/579  |  提交时间：2010/03/09
Tunable Lasers  
Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Yu XG;  Chen SW;  Yu JZ;  Wang QM;  Yu, XG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(432Kb)  |  收藏  |  浏览/下载：1346/325  |  提交时间：2010/03/09
Optoelectronics Devices  
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Cheng BW;  Xue HY;  Hu D;  Han GQ;  Zeng YG;  Bai AQ;  Xue CL;  Luo LP;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(331Kb)  |  收藏  |  浏览/下载：1521/312  |  提交时间：2010/03/09
Sige/si(100) Epitaxial-films