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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)
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浏览/下载:1470/197
  |  
提交时间:2010/03/29
Micro-raman
4h-sic
Defects
3c-inclusions
Triangle-shaped Inclusion
Epitaxial Layers
Silicon-carbide
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
;
Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)
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收藏
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浏览/下载:1611/222
  |  
提交时间:2010/03/29
Polycrystalline 3c-sic
Resonator
Doping
Silicon-carbide
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)
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  |  
浏览/下载:1263/198
  |  
提交时间:2010/03/29
Homoepitaxy
4h-sic
Multi-epilayer
Uv Detection
p(+)-pi-n(-)
Ultraviolet Photodetector
Epitaxial-growth
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)
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收藏
  |  
浏览/下载:1400/273
  |  
提交时间:2010/03/29
Avalanche Photodiodes
Area
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
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  |  
浏览/下载:1479/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes
Research on nitrogen implantation energy dependence of the properties of SIMON materials
会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
作者:
Zhang EX
;
Sun JY
;
Chen J
;
Chen M
;
Zhang ZX
;
Li N
;
Zhang GQ
;
Wang X
;
Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
Adobe PDF(118Kb)
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浏览/下载:1769/293
  |  
提交时间:2010/03/29
Nitrogen
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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  |  
浏览/下载:1844/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)
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  |  
浏览/下载:1364/281
  |  
提交时间:2010/03/29
4h-sic
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)
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收藏
  |  
浏览/下载:1477/293
  |  
提交时间:2010/03/29
Chemical-vapor-deposition
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)
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收藏
  |  
浏览/下载:1248/196
  |  
提交时间:2010/03/29
Si(111)
Aln