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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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A 5GHz low power WLAN transceiver SiGe RFIC for personal communication terminal applications
会议论文
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, JAN 10-12, 2007
作者:
Yan, J (Yan, Jun)
;
Xu, QM (Xu, Qiming)
;
Zhang, XL (Zhang, Xuelian)
;
Hu, XQ (Hu, Xueqing)
;
Xu, H (Xu, Hua)
;
Shi, Y (Shi, Yin)
;
Dai, FF (Dai, Fa Foster)
;
Yan, J, Chinese Acad Sci, Inst Semicond, SemiRF Lab, ISCAS, Beijing 100083, Peoples R China.
Adobe PDF(82Kb)
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浏览/下载:1653/251
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提交时间:2010/03/29
Personal Communication Terminal
Sige Rfic
Wlan 802.11a Transceiver
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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浏览/下载:1844/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
The diphasic nc-Si/a-Si : H thin film with improved medium-range order
会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 338, Campos do Jordao, BRAZIL, AUG 25-29, 2003
作者:
Zhang S
;
Liao X
;
Xu Y
;
Martins R
;
Fortunato E
;
Kong G
;
Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(484Kb)
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浏览/下载:1440/340
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提交时间:2010/11/15
Amorphous-silicon Films
Scattering
Absorption
Densities
Hydrogen
Characterization of polymorphous silicon thin film and solar cells
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Zhang S
;
Xu Y
;
Liao X
;
Martins R
;
Fortunato E
;
Hu Z
;
Kong G
;
Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(270Kb)
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浏览/下载:1369/215
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提交时间:2010/10/29
Polymorphous Silicon
Thin Film
Solar Cell
Improved diphasic nc-si/a-si : H I-layer materials using PECVD
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Hao, HY
;
Zhang, SB
;
Xu, YY
;
Zeng, XB
;
Diao, HW
;
Kong, GL
;
Liao, XB
;
Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(129Kb)
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浏览/下载:1396/230
  |  
提交时间:2010/03/29
Open-circuit Voltage
Silicon Solar-cells
Amorphous-silicon
Absorption
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:
Xu ZY
;
Luo XD
;
Yang XD
;
Tan PH
;
Yang CL
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
;
Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)
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  |  
浏览/下载:1724/334
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Alloys
Gaas1-xnx
Photoluminescence
Relaxation
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline
会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:
Zhang SB
;
Liao XB
;
Xu YY
;
Hu ZH
;
Zeng XB
;
Diao HW
;
Luo MC
;
Kong G
;
Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(93Kb)
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收藏
  |  
浏览/下载:1791/428
  |  
提交时间:2010/10/29
Polymorphous Silicon
Light-scattering
Thin-films
Si
Microcrystallinity
Absorption
States
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes
会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:
Zhang ZY
;
Li CM
;
Jin P
;
Meng XQ
;
Xu B
;
Ye XL
;
Wang ZG
;
Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)
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  |  
浏览/下载:1548/302
  |  
提交时间:2010/10/29
Spectrum
Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition
会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:
Zeng XB
;
Liao XB
;
Diao HW
;
Hu ZH
;
Xu YY
;
Zhang SB
;
Chen CY
;
Chen WD
;
Kong GL
;
Zeng XB Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(683Kb)
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收藏
  |  
浏览/下载:1586/333
  |  
提交时间:2010/10/29
Laser-ablation
Semiconductor Nanowires
Growth
Mechanism
Evaporation
Diameter
Wires
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:
Li Q
;
Fang ZL
;
Xu SJ
;
Li GH
;
Xie MH
;
Tong SY
;
Zhang XH
;
Liu W
;
Chua SJ
;
Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(312Kb)
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收藏
  |  
浏览/下载:1527/249
  |  
提交时间:2010/11/15
Piezoelectric Field
Photoluminescence
Temperature