Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline
	Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G; Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
	2003
会议名称	Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting
会议录名称	QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737
页码	679-684
会议日期	DEC 02, 2001-DEC 05, 2002
会议地点	BOSTON, MA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-674-5
部门归属	chinese acad sci, inst semicond, ctr condensed state phys, state key lab surface phys, beijing 100083, peoples r china
摘要	A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.
关键词	Polymorphous Silicon Light-scattering Thin-films Si Microcrystallinity Absorption States
学科领域	半导体材料
主办者	Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13623
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhang SB,Liao XB,Xu YY,et al. Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:679-684.

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