SEMI OpenIR  > 中科院半导体材料科学重点实验室
具势垒层的氮化镓基高电子迁移率晶体管结构及制作方法
王晓亮; 彭恩超; 王翠梅; 肖红领; 冯春; 姜丽娟; 陈竑
Rights Holder中国科学院半导体研究所
Date Available2013-05-29
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-02-07
Application NumberCN201310048977.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25849
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王晓亮,彭恩超,王翠梅,等. 具势垒层的氮化镓基高电子迁移率晶体管结构及制作方法.
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