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一种利用光致发光谱测量GaN基LED的极化电场的方法
魏学成; 赵丽霞; 张连; 于治国; 王军喜; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2014-01-22
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-09-25
Application NumberCN201310459347.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25521
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
魏学成,赵丽霞,张连,等. 一种利用光致发光谱测量GaN基LED的极化电场的方法.
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