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能带调控提高GaN/InGaN多量子阱蓝光LED效率研究 期刊论文
中国科学: 物理学 力学 天文学, 2015, 卷号: 45, 期号: 6, 页码: 067305
Authors:  张连;  魏学成;  路坤熠;  魏同波;  王军喜;  李晋闽
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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文
IEEE PHOTONICS JOURNAL, 2014, 卷号: 6, 期号: 6, 页码: 8200610
Authors:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang;  Sun, Baojun;  Hu, Qiang;  Wei, Xuecheng;  Duan, Ruifei;  Zhao, Lixia;  Zeng, Yiping;  Li, Jinmin
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InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer 期刊论文
PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2013, 卷号: 469, 期号: 2151, 页码: 20120652
Authors:  Wang, Liancheng;  Zhang, Yiyun;  Li, Xiao;  Liu, Zhiqiang;  Zhang, Lian;  Guo, Enqing;  Yi, Xiaoyan;  Wang, Guohong
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Growth and optical properties of InGaN/GaN dual-wavelength light-emitting diodes 期刊论文
Acta Photonica Sinica, 2013, 卷号: 42, 期号: 10, 页码: 1135-1139
Authors:  Zhao, Ling-Hui;  Zhang, Lian;  Wang, Xiao-Dong;  Lu, Hong-Xi;  Wang, Jun-Xi;  Zeng, Yi-Ping
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GaN基蓝光LED发光效率的研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  张连
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分离富集铂族金属的新型螯合树脂的研究 学位论文
, 北京: 中国科学院半导体研究所, 1989
Authors:  张连初
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利用三维极化感应空穴气提高LED发光效率的方法 专利
专利类型: 发明, 专利号: CN201010119349.9, 公开日期: 2011-08-31
Inventors:  张连;  丁凯;  王军喜;  段瑞飞;  曾一平;  李晋闽
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利用极化感应空穴实现p型金属极性宽禁带半导体的方法 专利
专利类型: 发明, 专利号: CN201010128387.0, 公开日期: 2011-08-31
Inventors:  丁凯;  张连;  王军喜;  段瑞飞;  曾一平;  李晋闽
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可调控能带的UV LED多量子阱结构装置及生长方法 专利
专利类型: 发明, 公开日期: 2013-09-25
Inventors:  张连;  曾建平;  魏同波;  闫建昌;  王军喜;  李晋闽
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一种可调控能带的LED量子阱结构 专利
专利类型: 发明, 公开日期: 2013-09-11
Inventors:  张连;  曾建平;  路红喜;  王军喜;  李晋闽
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