中国科学院半导体研究所机构知识库(SEMI OpenIR): 中科院半导体照明研发中心

SEMI OpenIR > 中科院半导体照明研发中心

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Integrated High‑Q Crystalline AlN Microresonators for Broadband Kerr and Raman Fr.. [期刊论文, 2019-11]
Characteristics of III-nitride based laser diode employed for short range underwat.. [期刊论文, 2019-11]
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migra.. [期刊论文, 2019-11]
Crystallographic orientation control and optical properties of GaN nanowires [期刊论文, 2019-11]
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire [期刊论文, 2019-11]
Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selecti.. [期刊论文, 2019-11]
InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer [期刊论文, 2019-11]
Introducing carbon dots to moderate the blue emission from zinc vanadium oxide hyd.. [期刊论文, 2019-11]
AlN侧向外延及AlN半极性面生长的调控 [学位论文, 2019-11]
高密度Micro-LED阵列制备及应用研究 [学位论文, 2019-11]

1. Improving light extraction of InGaN-based light emitting diodes with a roughened p..

[1019]

2. LED光源在现代农业的应用原理与技术进展

[730]

3. 垂直结构GaN基LED的侧壁优化技术

[704]

4. Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Pa..

[666]

5. Enhanced performance of GaN based light-emitting diodes with a low temperature p-G..

[608]

6. Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes b..

[588]

7. Co掺杂CaO材料的铁磁性研究

[572]

8. Anomalous temperature dependence of photoluminescence in self-assembled InGaN quan..

[539]

9. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice in..

[521]

10. 1.86 W cw single-frequency 1319 nm ring laser pumped at 885 nm

[492]

1. 氮化铝谐振式压电MEMS 加速度计研究

[1]

2. Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

[1]

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