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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文
IEEE PHOTONICS JOURNAL, 2014, 卷号: 6, 期号: 6, 页码: 8200610
Authors:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang;  Sun, Baojun;  Hu, Qiang;  Wei, Xuecheng;  Duan, Ruifei;  Zhao, Lixia;  Zeng, Yiping;  Li, Jinmin
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Characterization of nitride-based LED materials and devices using TOF-SIMS 期刊论文
SURFACE AND INTERFACE ANALYSIS, 2014, 卷号: 46, 页码: 299-302
Authors:  Wei, Xuecheng;  Zhao, Lixia;  Wang, Junxi;  Zeng, Yiping;  Li, Jinmin
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Tunable Fano Resonance in E-Shape Plasmonic Nanocavities 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 卷号: 118, 期号: 43, 页码: 25124-25131
Authors:  Sun, Bo;  Zhao, Lixia;  Wang, Chao;  Yi, Xiaoyan;  Liu, Zhiqiang;  Wang, Guohong;  Li, Jinmin
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Shape designing for light extraction enhancement bulk-GaN light-emitting diodes 期刊论文
Journal of Applied Physics, 2013, 卷号: 113, 期号: 24, 页码: 243104
Authors:  Sun, Bo;  Zhao, Lixia;  Wei, Tongbo;  Yi, Xiaoyan;  Liu, Zhiqiang;  Wang, Guohong;  Li, Jinmin
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Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114006
Authors:  An Tielei;  Sun Bo;  Wei Tongbo;  Zhao Lixia;  Duan Ruifei;  Liao Yuanxun;  Li Jinmin;  Yi Futing
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Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface 期刊论文
OPTICS EXPRESS, 2012, 卷号: 20, 期号: 17, 页码: 18537-18544
Authors:  Sun B (Sun, Bo);  Zhao LX (Zhao, Lixia);  Wei TB (Wei, Tongbo);  Yi XY (Yi, Xiaoyan);  Liu ZQ (Liu, Zhiqiang);  Wang GH (Wang, Guohong);  Li JM (Li, Jinmin);  Yi FT (Yi, Futing)
Adobe PDF(1994Kb)  |  Favorite  |  View/Download：1098/331  |  Submit date：2013/04/02
测试可见光通信系统中光源性能的装置 专利
专利类型: 发明, 公开日期: 2013-03-27, 2013-03-27
Inventors:  裴艳荣;  杨华;  赵丽霞;  王军喜
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垂直结构表面等离激元增强GaN基纳米柱LED及制备方法 专利
专利类型: 发明, 公开日期: 2013-09-25
Inventors:  于治国;  赵丽霞;  魏学成;  王军喜;  李晋闽
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垂直阵列纳米柱LED的制备方法 专利
专利类型: 发明, 公开日期: 2013-09-04
Inventors:  于治国;  赵丽霞;  魏学成;  王军喜;  李晋闽
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一种利用光致发光谱测量GaN基LED的极化电场的方法 专利
专利类型: 发明, 公开日期: 2014-01-22
Inventors:  魏学成;  赵丽霞;  张连;  于治国;  王军喜;  曾一平;  李晋闽
Adobe PDF(372Kb)  |  Favorite  |  View/Download：880/98  |  Submit date：2014/11/05