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题名: Epitaxial growth of SiC on complex substrates
作者: Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY
出版日期: 2001
会议日期: SEP 11-15, 2000
摘要: Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.
会议名称: 11th International Conference on Molecular Beam Epitaxy (MBE-XI)
KOS主题词: Microscopy;  X-ray crystallography;  atomic layer deposition;  Aluminum oxide;  sedimentation;  Photography--Films;  Finite volume method
会议文集: JOURNAL OF CRYSTAL GROWTH, 227
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY .Epitaxial growth of SiC on complex substrates .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,811-815
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