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题名: High-quality metamorphic HEMT grown on GaAs substrates by MBE
作者: Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP
出版日期: 2001
会议日期: SEP 11-15, 2000
摘要: Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.
会议名称: 11th International Conference on Molecular Beam Epitaxy (MBE-XI)
KOS主题词: atomic layer deposition;  Modulation-doped field-effect transistors;  Density
会议文集: JOURNAL OF CRYSTAL GROWTH, 227
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP .High-quality metamorphic HEMT grown on GaAs substrates by MBE .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,210-213
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