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题名: Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
作者: Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP
出版日期: 2001
会议日期: SEP 11-15, 2000
摘要: The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.
会议名称: 11th International Conference on Molecular Beam Epitaxy (MBE-XI)
KOS主题词: atomic layer deposition;  Migration, Internal
会议文集: JOURNAL OF CRYSTAL GROWTH, 227
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP .Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,127-131
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