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Si based quantum cascade structure: from energy band structures design to materials growth 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:  Yu, JZ;  Han, GQ;  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)  |  收藏  |  浏览/下载：1746/311  |  提交时间：2010/03/09
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Tang, CG;  Chen, YH;  Liu, Y;  Zhang, RQ;  Liu, XL;  Wang, ZG;  Zhang, R;  Zhang, Z;  Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：1900/374  |  提交时间：2010/03/09
Quantum-wells  Spin  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1516/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文
THIN SOLID FILMS, Awaji Isl, JAPAN, MAY 23-26, 2005
作者:  Yu, J;  Kasper, E;  Oehme, M;  Kasper, E, Univ Stuttgart, Inst Halbleitertech, Pfaffenwaldring 47, D-70569 Stuttgart, Germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1275/238  |  提交时间：2010/03/29
Sige  
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Fan WJ;  Abiyasa AP;  Tan ST;  Yu SF;  Sun XW;  Xia JB;  Yeo YC;  Li MF;  Chong TC;  Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：3048/1041  |  提交时间：2010/03/29
Computer Simulation  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Jiang, DS;  Qu, YH;  Ni, HQ;  Wu, DH;  Xu, YQ;  Niu, ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1802/365  |  提交时间：2010/03/29
Molecular Beam Epitaxy  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1742/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Zhao, Q;  Pan, JQ;  Zhang, J;  Zhou, GT;  Wu, J;  Wang, LF;  Wang, W;  Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(181Kb)  |  收藏  |  浏览/下载：1511/337  |  提交时间：2010/03/29
Selective-area Growth  Ultra-low-pressure  Integrated Optoelectronics  Optical Pulse Generation  Ring Laser  
Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Xie, HY;  Pan, JQ;  Yang, H;  Zhao, LJ;  Zhu, HL;  Wang, LF;  Cui, AH;  Wang, W;  Xie, HY, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  收藏  |  浏览/下载：1645/404  |  提交时间：2010/03/29
Wide Gain Bandwidth  Dfb Laser  Non-identical Quantum Well  Cwdm  Superluminescent Diodes  
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation 会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:  Xu Y;  Zhu XP;  Gan QQ;  Song GF;  Cao Q;  Guo, L;  Li YZ;  Chen LH;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(77Kb)  |  收藏  |  浏览/下载：1485/324  |  提交时间：2010/03/29
Valence Band Mixing