Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

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	Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
	Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC; Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
	2006
会议名称	3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials
会议录名称	JOURNAL OF CRYSTAL GROWTH
页码	288 (1): 12-17
会议日期	JUL 03-08, 2005
会议地点	Singapore, SINGAPORE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要	It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved.
关键词	Molecular Beam Epitaxy
学科领域	半导体物理
主办者	Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10040
专题	中国科学院半导体研究所（2009年前）
通讯作者	Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
推荐引用方式 GB/T 7714	Jiang, DS,Qu, YH,Ni, HQ,et al. Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:288 (1): 12-17.

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