Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O
	Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W; Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
	2005
会议名称	Conference on Optoelectronic Materials and Devices for Optical Communications
会议录名称	Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码	6020: O200-O200
会议日期	NOV 07-10, 2005
会议地点	Shanghai, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-6051-6
部门归属	chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
摘要	A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.
关键词	Selective-area Growth Ultra-low-pressure Integrated Optoelectronics Optical Pulse Generation Ring Laser
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.; China Inst Commun.; Shanghai Jiao Tong Univ.; Alcatel Shanghai Bell.; Shanghai Inst Opt & Fine Mech.; Photon Bridges.; IEEE Commun Soc.; IEEE LEOS.; Opt Soc Amer.; Huawei Technol.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9894
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, Q,Pan, JQ,Zhang, J,et al. Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2005:6020: O200-O200.

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