Observation of photogalvanic current for interband absorption in InN films at room temperature

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	Observation of photogalvanic current for interband absorption in InN films at room temperature
	Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z; Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	2nd IEEE International Nanoelectronics Conference
会议录名称	2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
页码	VOLS 1-3: 1066-1069
会议日期	MAR 24-27, 2008
会议地点	Shanghai, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1572-4
部门归属	[tang, c. g.; chen, y. h.; liu, y.; zhang, r. q.; liu, x. l.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.
关键词	Quantum-wells Spin
学科领域	半导体材料
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7758
专题	中国科学院半导体研究所（2009年前）
通讯作者	Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Tang, CG,Chen, YH,Liu, Y,et al. Observation of photogalvanic current for interband absorption in InN films at room temperature[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 1066-1069.

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