Si based quantum cascade structure: from energy band structures design to materials growth

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Si based quantum cascade structure: from energy band structures design to materials growth
	Yu, JZ; Han, GQ; Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
	2009
会议名称	3rd Sino-German Symposium on Silicon Age - Silicon for Microelectronics, Photonics and Photovoltacis
会议录名称	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
页码	VOL 6,NO 3,6 (3): 704-706
会议日期	JUN 09-14, 2008
会议地点	Hangzhou, PEOPLES R CHINA
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	[yu, jinzhong; han, genquan] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	In this paper, we propose an n-type vertical transition bound-to-continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Gamma-L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1-yGey pseudosubstrate is obtained by thermal annealing of Si1-xGex/Ge/Si structure. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
学科领域	光电子学
主办者	Sino-German Sci Ctr.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8314
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Yu, JZ,Han, GQ,Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.. Si based quantum cascade structure: from energy band structures design to materials growth[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2009:VOL 6,NO 3,6 (3): 704-706.

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