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Improved performance of 1.3-mu m InAs-GaAs quantum dot lasers by direct Si doping 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 页码: 011105
Authors:  Zun-Ren Lv;   Zhong-Kai Zhang;   Xiao-Guang Yang;   Tao Yang
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Influences of Ridge-Waveguide Shape and Width on Performances of InP-Based Coupled Ridge-Waveguide Laser Arrays 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2018, 卷号: 54, 期号: 5, 页码: 1-4
Authors:  Zhong-Kai Zhang;   Feng Xu;   Jin-Chuan Zhang ;   Zun-Ren Lv;   Xiao-Guang Yang;   Tao Yang ;   Membe,IEEE
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Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance 期刊论文
Nanoscale, 2017, 卷号: 9, 页码: 15416–15422
Authors:  Kai Zhang;  Jia Ding;  Zheng Lou;  Ruiqing Chai;  Mianzeng Zhong;  Guozhen Shen
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Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations 期刊论文
SOLID STATE COMMUNICATIONS, 2013, 卷号: 161, 页码: 34-37
Authors:  Lin, Liang-Zhong;  Cheng, F.;  Zhang, D.;  Lou, Wen-Kai;  Zhang, Le-Bo
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UHV/CVD法生长硅基低位错密度厚锗外延层 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 2, 页码: 315-318
Authors:  周志文;  蔡志猛;  张永;  蔡坤煌;  周笔;  林桂江;  汪建元;  李成;  赖虹凯;  陈松岩;  余金中;  王启明
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二维荷电粒子维格纳晶格:边界效应 期刊论文
计算物理, 2006, 卷号: 23, 期号: 4, 页码: 470-476
Authors:  张振中;  蒋昌忠;  常凯
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部分耗尽型注氟SIMOX器件的电离辐射效应 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 349-353
Authors:  李宁;  张国强;  刘忠立;  范楷;  郑中山;  林青;  张正选;  林成鲁
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注氮工艺对SIMOX器件电特性的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 835-839
Authors:  张国强;  刘忠立;  李宁;  范楷;  郑中山;  张恩霞;  易万兵;  陈猛;  王曦
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埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响 期刊论文
物理学报, 2005, 卷号: 54, 期号: 1, 页码: 348-353
Authors:  郑中山;  刘忠立;  张国强;  李宁;  范楷;  张恩霞;  易万兵;  陈猛;  王曦
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P2S5/NH4OH处理GaAs(100)表面的电子能谱研究 期刊论文
物理学报, 1992, 卷号: 41, 期号: 4, 页码: 683
Authors:  钟战天;  罗文哲;  牟善明;  张开颜;  李侠;  李承芳
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