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Theoretical progress of polarized interfaces in semiconductors 期刊论文
Acta Physica Sinica, 2019, 卷号: 68, 期号: 16, 页码: 167101
Authors:  Zhang Dong ;   Lou Wen -Kai ;   Chang Kai
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Localized surface plasmon enhanced photothermal conversion in Bi2Se3 topological insulator nanoflowers 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 25884
Authors:  Jia Guozhi;  Wang Peng;  Zhang Yanbang;  Chang Kai
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Anomalous electron trajectory in topological insulators 期刊论文
PHYSICAL REVIEW B, 2013, 卷号: 87, 期号: 16, 页码: 161115
Authors:  Shi, Li-kun;  Zhang, Shou-cheng;  Chang, Kai
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Generation of Pure Bulk Valley Current in Graphene 期刊论文
PHYSICAL REVIEW LETTERS, 2013, 卷号: 110, 期号: 4, 页码: 046601
Authors:  Jiang, Yongjin;  Low, Tony;  Chang, Kai;  Katsnelson, Mikhail I.;  Guinea, Francisco
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Spin-orbit interaction induced anisotropic property in interacting quantum wires 期刊论文
Nanoscale Research Letters, 2011, 卷号: 6, 页码: 1-7
Authors:  Cheng, Fang;  Zhou, Guanghui;  Chang, Kai;  Chang, K.(
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Anisotropy  Ground State  Metamagnetism  Nanowires  Quantum Theory  Semiconductor Quantum Wires  Transport Properties  Wire  
Quantum tunneling through graphene nanorings 期刊论文
NANOTECHNOLOGY, 2010, 卷号: 21, 期号: 18, 页码: Art. No. 185201
Authors:  Wu ZH (Wu Zhenhua);  Zhang ZZ (Zhang Z. Z.);  Chang K (Chang Kai);  Peeters FM (Peeters F. M.);  Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Quantum tunneling through planar p-n junctions in HgTe quantum wells 期刊论文
NEW JOURNAL OF PHYSICS, 2010, 期号: 12, 页码: Art. No. 083058
Authors:  Zhang LB (Zhang L. B.);  Chang K (Chang Kai);  Xie XC (Xie X. C.);  Buhmann H (Buhmann H.);  Molenkamp LW (Molenkamp L. W.)
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Single Dirac Cone  Topological Insulators  Hall  Surface  State  Phase  
Tuning of the two electron states in quantum rings through the spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 4, 页码: Art. No. 045312
Authors:  Liu Y (Liu Y.);  Cheng F (Cheng F.);  Li XJ (Li X. J.);  Peeters FM (Peeters F. M.);  Chang K (Chang Kai);  Chang, K, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Gate Control  Spintronics  Resonance  Energy  Layers  Dot  
Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 3, 页码: Art. No. 033304
Authors:  Li J (Li Jun);  Chang K (Chang Kai);  Li, J, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Relaxation Anisotropy  Quantum-wells  Semiconductors  Systems  
Magnetic barrier on strained graphene: A possible valley filter 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 11, 页码: Art. No. 115442
Authors:  Zhai F (Zhai Feng);  Zhao XF (Zhao Xiaofang);  Chang K (Chang Kai);  Xu HQ (Xu H. Q.);  Zhai, F, Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China
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