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144 W高功率、高亮度半导体蓝光激光器 期刊论文
中国激光, 2016, 期号: 5, 页码: 287
Authors:  吴鹏;  张玲;  于海娟;  袁仙丹;  张志研;  赵鹏飞;  李港;  王旭葆;  林学春
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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703
Authors:  Feng Liang;  Ping Chen;  De-Gang Zhao;  De-Sheng Jiang;  Zhi-Juan Zhao;  Zong-Shun Liu;  Jian-Jun Zhu;  Jing Yang;  Wei Liu;  Xiao-Guang He;  Xiao-Jing Li;  Xiang Li;  Shuang-Tao Liu;  Hui Yang;  Li-Qun Zhang;  Jian-Ping Liu;  Yuan-Tao Zhang;  Guo-Tong Du
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Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 11, 页码: 117103
Authors:  Zhao GJ (Zhao Gui-Juan);  Li ZW (Li Zhi-Wei);  Wei HY (Wei Hong-Yuan);  Liu GP (Liu Gui-Peng);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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Electrical and optical coupling in an electroabsorption modulator integrated with a DFB laser 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 卷号: 43, 期号: 7-8, 页码: 535-544
Authors:  Zhu, NH (Zhu, Ning Hua);  Hou, GH (Hou, Guang Hui);  Huang, HP (Huang, Heng Pei);  Xu, GZ (Xu, Gui Zhi);  Zhang, T (Zhang, Tao);  Liu, Y (Liu, Yu);  Zhu, HL (Zhu, Hong Liang);  Zhao, LJ (Zhao, Ling Juan);  Wang, W (Wang, Wei);  Zhu, NH, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: nhzhu@semi.ac.cn
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Dfb Laser Diode  
宽带偏振不灵敏InGaAs半导体光放大器 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 3, 页码: 567-570
Authors:  王书荣;  王圩;  刘志宏;  朱洪亮;  张瑞英;  丁颖;  赵玲娟;  周帆;  田慧良
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一种在蓝宝石衬底上生长自剥离氮化镓薄膜的方法 专利
专利类型: 发明, 公开日期: 2012-12-26
Inventors:  王建霞;  李志伟;  赵桂娟;  桑玲;  刘长波;  魏鸿源;  焦春美;  杨少延;  刘祥林;  朱勤生;  王占国
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一种生长富In组分非极性A面InGaN薄膜的方法 专利
专利类型: 发明, 公开日期: 2012-12-12
Inventors:  赵桂娟;  李志伟;  桑玲;  刘贵鹏;  刘长波;  谷承艳;  魏鸿源;  刘祥林;  朱勤生;  杨少延;  王占国
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制备T相BiFeO3薄膜的方法 专利
专利类型: 发明, 公开日期: 2014-01-29
Inventors:  赵亚娟;  尹志岗;  张兴旺;  付振;  吴金良
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制备非极性A面GaN薄膜的方法 专利
专利类型: 发明, 公开日期: 2012-12-12
Inventors:  赵桂娟;  李志伟;  桑玲;  魏鸿源;  刘祥林;  朱勤生;  杨少延;  王占国
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基于四方相铁酸铋的MFIS结构及制备方法 专利
专利类型: 发明, 公开日期: 2014-06-04
Inventors:  付振;  尹志岗;  张兴旺;  赵亚娟;  陈诺夫;  吴金良
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