Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
Liang S; Zhu HL; Zhou JT; Cheng YB; Pan JQ; Zhao LJ; Wang W; Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
2006
会议名称International Symposium on Biophotonics, Nanophotonics and Metamaterials
会议录名称Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials
页码302-305
会议日期OCT 16-18, 2006
会议地点Hangzhou, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-0-7803-9773-6
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.
关键词Chemical-vapor-deposition
学科领域光电子学
主办者Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9850
专题中国科学院半导体研究所(2009年前)
通讯作者Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Liang S,Zhu HL,Zhou JT,et al. Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:302-305.
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