SEMI OpenIR  > 中科院半导体材料科学重点实验室
Molecular beam epitaxial growth of AlSb/InAsSb heterostructures
Zhang, YW; Zhang, Y; Guan, M; Cui, LJ; Li, YB; Wang, BQ; Zhu, ZP; Zeng, YP
2014
Source PublicationAPPLIED SURFACE SCIENCE
Volume313Pages:479-483
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26203
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, YW,Zhang, Y,Guan, M,et al. Molecular beam epitaxial growth of AlSb/InAsSb heterostructures[J]. APPLIED SURFACE SCIENCE,2014,313:479-483.
APA Zhang, YW.,Zhang, Y.,Guan, M.,Cui, LJ.,Li, YB.,...&Zeng, YP.(2014).Molecular beam epitaxial growth of AlSb/InAsSb heterostructures.APPLIED SURFACE SCIENCE,313,479-483.
MLA Zhang, YW,et al."Molecular beam epitaxial growth of AlSb/InAsSb heterostructures".APPLIED SURFACE SCIENCE 313(2014):479-483.
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