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Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
Authors:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
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Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文
SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497
Authors:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Zesheng Ji;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
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The immiscibility of InAlN ternary alloy 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 26600
Authors:  Guijuan Zhao;  Xiaoqing Xu;  Huijie Li;  Hongyuan Wei;  Dongyue Han;  Zesheng Ji;  Yulin Meng;  Lianshan Wang;  Shaoyan Yang
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Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 20787
Authors:  Guijuan Zhao;  Lianshan Wang;  Shaoyan Yang;  Huijie Li;  Hongyuan Wei;  Dongyue Han;  Zhanguo Wang
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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates 期刊论文
Nanoscale Res Lett, 2016, 卷号: 11, 期号: 1, 页码: 270
Authors:  Huijie Li;  Guijuan Zhao;  Hongyuan Wei;  Lianshan Wang;  Zhen Chen;  Shaoyan Yang
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Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned 期刊论文
Nanoscale, 2015, 卷号: 7, 期号: 39, 页码: 16481-16492
Authors:  Huijie Li;  Guijuan Zhao;  Susu Kong;  Dongyue Han;  Hongyuan Wei;  Lianshan Wang;  Zhen Chen;  Shaoyan Yang
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Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures 期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2015, 卷号: 66, 页码: 116-119
Authors:  Huijie Li;  Guipeng Liu;  Guijuan Zhao;  Hongyuan Wei;  Lianshan Wang;  Shaoyan Yang;  Zhen Chen;  Zhanguo Wang
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X-ray probe of GaN thin films grown on InGaN compliant substrates 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 13, 页码: 132104
Authors:  Xu, Xiaoqing;  Li, Yang;  Liu, Jianming;  Wei, Hongyuan;  Liu, Xianglin;  Yang, Shaoyan;  Wang, Zhanguo;  Wang, Huanhua
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Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:  Li, Huijie;  Liu, Xianglin;  Feng, Yuxia;  Wei, Hongyuan;  Yang, Shaoyan
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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