SEMI OpenIR  > 中科院半导体材料科学重点实验室
Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen
2013
Source PublicationNano Letters
Volume13Issue:5Pages:2024–2029
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24511
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen. Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN[J]. Nano Letters,2013,13(5):2024–2029.
APA Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen.(2013).Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.Nano Letters,13(5),2024–2029.
MLA Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen."Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN".Nano Letters 13.5(2013):2024–2029.
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