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| Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080 Authors: Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang
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| Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文 Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153 Authors: Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang
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| Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文 Materials Research Express, 2019, 卷号: 6, 页码: 076203 Authors: Wei Liu ; Feng Liang ; Degang Zhao ; Jing Yang ; Desheng Jiang ; Jianjun Zhu ; Zongshun Liu
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| Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文 Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280 Authors: Shuangtao Liu; Jing Yang; Degang Zhao; Desheng Jiang; Jianjun Zhu; Feng Liang; Ping Chen; Zongshun Liu; Yao Xing; Liyuan Peng
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| Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文 Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951 Authors: FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG
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| Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文 NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88 Authors: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang
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| Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 790, 页码: 197-202 Authors: Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang
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| The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文 Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234 Authors: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Wei Liu ; Feng Liang ; Shuangtao Liu ; Liqun Zhang ; Wenjie Wang ; Mo Li ; Yuantao Zhang ; Guotong Du
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| Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs 期刊论文 Superlattices and Microstructures, 2018, 卷号: 114, 页码: 32-36 Authors: Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li
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| Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN 期刊论文 Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 期号: 12, 页码: 1026 Authors: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang; Shuangtao Liu; Yao Xing; Liqun Zhang
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