| Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs | |
| Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li | |
| 2018 | |
| Source Publication | Superlattices and Microstructures
 |
| Volume | 114Pages:32-36 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29332 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li. Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs[J]. Superlattices and Microstructures,2018,114:32-36. |
| APA | Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li.(2018).Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs.Superlattices and Microstructures,114,32-36. |
| MLA | Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li."Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs".Superlattices and Microstructures 114(2018):32-36. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 王晓伟 2018 SM Influenc（705KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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